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| Nazwa marki: | ZMSH |
| MOQ: | 1 |
| Czas dostawy: | 2-4 tygodnie |
| Warunki płatności: | T/T |
The SiC Bonding Machine is a high-precision system designed to bond wafers, SiC seeds, graphite paper, and graphite plates. It provides accurate center alignment, vacuum-assisted bonding, and adjustable pressure, ensuring bubble-free, uniform, and stable bonding.
This machine is ideal for semiconductor manufacturing, SiC seed preparation, high-temperature ceramics, and research or pilot-scale applications. It offers a reliable, reproducible process for materials that require high precision and integrity.
High Bonding Precision: Accurate alignment guarantees uniform bonding across the substrate.
Bubble-Free Bonding: Vacuum-assisted bonding removes trapped air and prevents defects.
Adjustable Pressure: Ensures uniform compression for consistent bonding quality.
Material Compatibility: Supports wafers, SiC seeds, graphite paper, and graphite plates.
Stable and Reproducible Process: Ideal for small-batch or pilot-scale production.
User-Friendly Operation: Simple interface for easy control and process monitoring.
Center Alignment Mechanism: Precisely positions wafers, SiC seeds, and graphite plates.
Vacuum-Assisted Bonding: Eliminates air bubbles in the adhesive layer.
Adjustable Pressure System: Ensures uniform interface compression.
Programmable Process Parameters: Temperature, pressure, and dwell time can be set for specific materials.
Data Logging and Monitoring: Records process parameters for quality assurance.
Compact and Modular Design: Easy to integrate into existing workflows.
| Parameter | Specification | Notes |
|---|---|---|
| Maximum Substrate Size | ≤12 inches | Supports smaller wafers and substrates |
| Vacuum Level | ≤10⁻² Pa | Ensures bubble-free bonding |
| Pressure Range | 0–5 MPa | Adjustable for uniform compression |
| Temperature Range | Ambient – 300 °C | Optional heating for specific adhesives |
| Cycle Time | 5–60 min | Adjustable depending on substrate and process |
| Power Supply | 220V / 380V | Single or three-phase depending on installation |
| Motion Control | Manual or semi-automated | Allows precise alignment and bonding |
SiC Seed Bonding: High-precision bonding of SiC seeds to wafers or substrates.
Semiconductor Wafers: Bonding single or multi-layer wafers.
Graphite Substrates: Bonding graphite paper or plates for high-temperature applications.
R&D and Pilot Production: Small-batch or research-scale bonding.
High-Temperature Materials: Bonding ceramic or composite substrates.
Q1: What substrates can this bonding machine handle?
A1: Wafers, SiC seeds, graphite paper, and graphite plates, including rigid and flexible substrates.
Q2: How is bubble-free bonding achieved?
A2: Vacuum-assisted bonding removes trapped air, ensuring a defect-free adhesive layer.
Q3: Is the bonding pressure adjustable?
A3: Yes, pressure is adjustable from 0–5 MPa for uniform interface compression.
Q4: Can this machine support pilot-scale production?
A4: Yes, it is suitable for research, pilot-scale, and small-batch production.
Q5: Is the machine easy to operate?
A5: Yes, the system features a user-friendly interface and semi-automated alignment for easy operation.
