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| Nazwa marki: | ZMSH |
Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics
Product Overview
6H Silicon Carbide (SiC) substrates are high-quality single-crystal wafers designed for high-temperature, high-voltage, and specialized optoelectronic applications. Unlike 4H SiC, 6H offers a different hexagonal polytype with slightly lower electron mobility but excellent thermal stability, mechanical strength, and cost-effectiveness for niche uses such as UV LEDs, high-temperature sensors, and industrial electronics.
Key Features
Hexagonal 6H Crystal Structure: Ensures dimensional stability and mechanical robustness during wafer processing.
Electrical Properties: Moderate electron mobility suitable for high-temperature and high-voltage devices; supports smaller device footprints.
Thermal Conductivity (~390–450 W/m·K): Efficient heat dissipation in power modules and harsh environments.
Mechanical Strength & Chemical Resistance: High hardness and corrosion resistance for long-term reliability.
Epi-Ready Surface Options: Compatible with epitaxial growth, including hydrogen anneal and CMP polishing.
Customizable Sizes & Thickness: Available in standard diameters or tailored for specific production needs.
Applications
High-temperature semiconductor devices and sensors
UV LEDs and specialized optoelectronics
Aerospace and automotive electronics exposed to extreme conditions
Industrial electronics requiring compact and robust components
Research & development in wide-bandgap semiconductors
Technical Specifications (Typical & Customizable)
| Parameter | Specification |
|---|---|
| Material | Single-Crystal 6H SiC |
| Crystal Structure | Hexagonal (6H) |
| Diameter / Size | 25 mm (2″), 50 mm (4″), 100 mm (4″), 150 mm (6″), 200 mm (8″), 300 mm (12″); square or custom sizes available |
| Thickness | 350–1,000 µm (customizable) |
| Surface Finish | Epi-ready CMP, double-side polished (DSP), single-side polished (SSP) |
| Total Thickness Variation (TTV) | ≤5 µm typical |
| Bow / Warp | ≤40 µm (6″ typical) |
| Micropipe Density | <0.1 cm⁻² industrial target; premium grades <0.01 cm⁻² |
| Dislocation Density | <10⁴ cm⁻² (target for high-voltage yield) |
| Conductivity | N-type (conductive), semi-insulating (SI) options |
| Epi-ready | Yes — compatible with epitaxial growth |
Square Substrate Advantages
High-Temperature Sensors & UV LEDs: Square substrates provide precise alignment for electrodes and package bases.
Industrial Electronics: Enables compact design with high integration, reducing package-substrate gaps.
RF & Microwave Circuits (SI option): Reduced signal loss for high-frequency applications.
Manufacturing Process
Powder Synthesis: High-purity SiC feedstock.
Seed Mounting: 6H seed attached in growth ampoule.
High-Temperature Growth: Sublimation at 2300–2500°C forms SiC boule.
Slicing: Diamond wire saw slices wafers.
Polish & Inspection: CMP or diamond polishing for epi-ready surface; metrology and certificate of analysis (CoA) provided.
Key Applications & Use Cases
High-temperature electronics and industrial sensors
UV optoelectronics
Aerospace and defense electronics under extreme conditions
Compact high-reliability power devices for niche markets
R&D and pilot production of wide-bandgap semiconductor devices
FAQ
1.What makes 6H SiC substrates different from 4H?
6H SiC has a different hexagonal polytype, lower electron mobility, and cost-effective advantages for high-temperature and specialized applications, whereas 4H is standard for high-speed, high-efficiency power devices.
2.Can 6H SiC withstand high temperatures?
Yes, it maintains mechanical and electrical stability in extreme thermal environments.
3.Are 6H SiC substrates customizable?
Yes, diameter, thickness, surface finish, and conductivity can be tailored for R&D or production needs.
4.What industries use 6H SiC substrates?
High-temperature sensors, UV LEDs, aerospace, automotive, and industrial electronics that require robust performance in extreme conditions.
