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| Nazwa marki: | ZMSH |
| MOQ: | 10 |
| Czas dostawy: | 2-4 tygodnie |
| Warunki płatności: | T/T |
The 4H-SiC Substrate is a high-purity, single-crystal silicon carbide material designed for advanced power electronics, RF devices, and optoelectronic applications. Produced through the PVT method and finished with precision CMP polishing, each substrate features ultra-low defect density, excellent thermal conductivity, and stable electrical characteristics.
Its compact size is ideal for R&D, device prototyping, laboratory testing, and small-scale production.
Polytype: 4H-SiC
Conductivity: N-type doped
Micropipe Density (MPD): <1 cm⁻²
Dislocation Density: <10⁴ cm⁻²
Si-face (CMP): Ra ≤ 0.5 nm
C-face (polished): Ra ≤ 1 nm
Epitaxy-ready finish for high-quality epitaxial growth
Resistivity: 0.01–0.1 Ω·cm
Carrier concentration: 1×10¹⁸ – 5×10¹⁹ cm⁻³
Ideal for high-voltage and high-frequency device structures
Thermal conductivity: 490 W/m·K
Operating temperature capability: up to 600°C
Low thermal expansion coefficient: 4.0×10⁻⁶ /K
Vickers hardness: 28–32 GPa
Flexural strength: >400 MPa
Long service life and excellent wear resistance
| Category | Specification |
|---|---|
| Material | 4H-SiC Single Crystal (N-type) |
| Dimensions | 10×10 mm (±0.05 mm) |
| Thickness Options | 100–500 μm |
| Orientation | (0001) ± 0.5° |
| Surface Quality | CMP / Polished, Ra ≤ 0.5 nm |
| Resistivity | 0.01–0.1 Ω·cm |
| Thermal Conductivity | 490 W/m·K |
| Defects | MPD < 1 cm⁻² |
| Color | Green-tea surface tone (SiC typical) |
| Grade Options | Prime, Research, Dummy |
Non-standard sizes: 5×5 mm, 5×10 mm, Ø2–8 inch round substrates
Thickness: 100–500 μm or custom
Orientation: 4°, 8°, or on-axis
Surface finish: Single-side polish / double-side polish
Doping: N-type, P-type, semi-insulating
Backside metallization
Ideal for SiC MOSFETs, SBDs, diodes, and high-voltage device prototyping.
Used for RF power amplifiers (PA), switches, and millimeter-wave devices.
Supports EV inverter development, power module R&D, and wide-bandgap testing.
High-temperature and radiation-resistant electronic components.
UV LEDs, photodiodes, laser diodes, and GaN-on-SiC structures.
Material research, epitaxy experiments, device fabrication.
FAQ
1. What is the main advantage of 4H-SiC compared with 6H-SiC?
4H-SiC offers higher electron mobility, lower on-resistance, and superior performance in high-power and high-frequency devices. It is the industry-preferred material for MOSFETs, diodes, and advanced power modules.
2. Do you provide conductive or semi-insulating SiC substrates?
Yes. We offer N-type conductive 4H-SiC for power electronics and semi-insulating 4H-SiC for RF, microwave, and UV detector applications. Doping level and resistivity can be customized.
3. Can the substrate be used directly for epitaxy?
Yes. Our epi-ready 4H-SiC substrates feature CMP-polished Si-face surfaces with low defect density, suitable for MOCVD, CVD, and HVPE epitaxial growth of GaN, AlN, and SiC layers.
