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| Nazwa marki: | ZMSH |
| MOQ: | 10 |
| Czas dostawy: | 2-4 tygodnie |
| Warunki płatności: | T/T |
The Square Sapphire Substrate (SSP) is made from high-purity (>99.99%) single crystal Al₂O₃, offering excellent mechanical strength, thermal stability, and optical transparency. With C-plane (0001) orientation and single-side polished (SSP) surface, it is ideal for epitaxial growth, GaN-based LED production, optical components, and high-temperature or vacuum applications.
| Parameter | Specification |
|---|---|
| Material | High Purity >99.99%, Single Crystal Al₂O₃ |
| Dimension | 10 × 10 mm |
| Thickness | 1 mm (other thicknesses available upon request) |
| Orientation | C-plane (0001) to M (1-100) 0.2° ± 0.1° off |
| Lattice Parameter | a = 4.785 Å, c = 12.991 Å |
| Density | 3.98 g/cm³ |
| Thermal Expansion Coefficient | 6.66×10⁻⁶ /°C (‖C-axis), 5×10⁻⁶ /°C (⊥C-axis) |
| Dielectric Strength | 4.8×10⁵ V/cm |
| Dielectric Constant | 11.5 (‖C-axis), 9.3 (⊥C-axis) @ 1 MHz |
| Dielectric Loss Tangent | < 1×10⁻⁴ |
| Thermal Conductivity | 40 W/(m·K) at 20°C |
| Polishing | Single side polished (SSP), Ra < 0.3 nm (AFM); backside fine-ground Ra = 0.8–1.2 μm |
Exceptional chemical and thermal stability
High optical transparency and surface flatness
Low dielectric loss and high thermal conductivity
Excellent mechanical hardness and scratch resistance
Available in custom sizes, orientations, and thicknesses
GaN and AlN epitaxial growth
LED and laser diode manufacturing
Optical and infrared windows
High-power RF and microwave devices
Research and semiconductor testing
