Szczegóły Produktu
Place of Origin: CHINA
Nazwa handlowa: ZMSH
Orzecznictwo: rohs
Model Number: 6 Inch Quartz Wafer
Warunki płatności i wysyłki
Minimum Order Quantity: 10
Cena: by case
Packaging Details: Package in 100-grade cleaning room
Delivery Time: 5-8weeks
Payment Terms: T/T
Supply Ability: 1000pcs per month
Diameter: |
6 inch (150mm) |
Thickness Tolerance: |
±0.02mm |
Total Thickness Variation: |
≤10μm |
Surface Roughness: |
≤0.5nm Ra |
Parallelism: |
≤3μm |
Resistivity: |
>10¹⁶ Ω·cm |
Diameter: |
6 inch (150mm) |
Thickness Tolerance: |
±0.02mm |
Total Thickness Variation: |
≤10μm |
Surface Roughness: |
≤0.5nm Ra |
Parallelism: |
≤3μm |
Resistivity: |
>10¹⁶ Ω·cm |
ZMSH specializes in manufacturing 6-inch quartz wafers, offering:
Multi-size customization: Standard 6-inch wafers plus 4", 8", and 12" variants
Edge processing: Options for beveled edges, notches, and orientation flats
Surface treatments: Custom polishing, coating, and patterning services
Parameter | Specification |
Diameter | 6 inch (150mm) |
Thickness Range | 0.5mm~3.0mm |
Thickness Tolerance | ±0.02mm |
Total Thickness Variation | ≤10μm |
Surface Roughness (Polished) | ≤0.5nm Ra |
Parallelism | ≤3μm |
CTE (20-300°C) | 0.55×10⁻⁶/°C |
Transmittance @193nm | >92% |
Resistivity | >10¹⁶ Ω·cm |
Vacuum Compatibility | 10⁻¹⁰ Torr |
Flexural Strength (Strengthened) | 500-700MPa |
Characteristic | Technical Specification |
High Purity | ≥99.999% SiO₂ content |
CTE (20-300°C) | 0.55×10⁻⁶/°C (ultra-low thermal expansion) |
Tensile Strength | 50-70 MPa (chemically strengthened options available) |
Optical Transmittance | >92% @190-3500nm (UV to NIR spectrum) |
Electrical Properties | Resistivity >10¹⁶ Ω·cm, piezoelectric coefficients |
1. Semiconductor Manufacturing
6-inch quartz wafers are widely used in semiconductor packaging, chip fabrication, and related fields, particularly in the production of:
- Memory chips (DRAM, NAND Flash)
- Analog/power devices (IGBT, MOSFET)
- Advanced sensors (MEMS, CMOS image sensors)
2. Optical Components
Due to their high optical transmittance and ultra-low CTE, quartz wafers are ideal for:
- Precision lenses (aspheric, microlens arrays)
- Optical filters (bandpass, dichroic)
- Waveguides (photonic ICs, fiber coupling elements)
3. MEMS (Micro-Electro-Mechanical Systems)
Quartz wafers serve as premium substrates for MEMS devices due to their dimensional stability and mechanical robustness, including:
- Microsensors (pressure, inertial, biosensors)
- Microactuators (RF switches, piezoelectric transducers)
- Resonators (5G filters, timing devices)
4. High-Temperature Poly-Si TFT-LCDs
Quartz wafers are critical in manufacturing high-performance displays, specifically:
- HTPS (High-Temperature Poly-Si) TFT backplanes
- Microdisplays (AR/VR, LCoS)
- Advanced LCD panels (OLED encapsulation substrates)
We provide end-to-end solutions:
1. Material Selection: JGS1/JGS2 quartz, synthetic fused silica
2. Precision Machining:
- Laser cutting (±5μm tolerance)
- Ultrasonic drilling (aspect ratio 10:1)
3. Surface Engineering:
- Nano-polishing (Ra<0.3nm)
- DUV/IR anti-reflection coatings
4. Quality Assurance:
- Class 10 cleanroom processing
- Full metrology reports (TTV, warp, bow)
1. Q: What are the advantages of 6-inch quartz wafers over smaller sizes in semiconductor manufacturing?
A: 6-inch (150mm) quartz wafers provide 56% more usable area than 4-inch wafers, significantly reducing edge exclusion losses and improving throughput for advanced packaging and MEMS production.
2. Q: How does quartz wafer purity (≥99.999%) impact high-temperature processes?
A: 5N purity quartz minimizes contamination risks in HTPS TFT and semiconductor annealing processes above 1000°C, ensuring consistent dielectric properties.
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